Microelectronics reliability

• 

  Año 2017, Número 76-77

  • Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis

    N. Labat, François Marc, H. Frémont, Marise Bafleur

    págs. 1-5

    

  • Simulation of packaging under harsh environment conditions (temperature, pressure, corrosion and radiation)

    Kirsten Weide-Zaage

    • Resumen

    págs. 6-12

    

  • Enabling robust automotive electronic components in advanced CMOS nodes

    V. Huard, S. Mhira, F. Cacho, A. Bravaix

    • Resumen

    págs. 13-24

    

  • Reliability-oriented environmental thermal stress analysis of fuses in power electronics

    A.S. Bahman, Francesco Iannuzzo, T. Holmgaard, R.Ø. Nielsen, Frede Blaabjerg

    • Resumen

    págs. 25-30

    

  • Reliability assessment platform for the power semiconductor devices – Study case on 3-phase grid-connected inverter application

    Ionuț Vernica, Ke Ma, Frede Blaabjerg

    • Resumen

    págs. 31-37

    

  • Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability

    A. Hirler, J. Biba, A. Alsioufy, T. Lehndorff, T. Sulima, H. Lochner, U. Abelein, W. Hansch

    • Resumen

    págs. 38-41

    

  • Improved and accurate physics-of-failure (PoF) methodology for qualification and lifetime assessment of electronic systems

    A.B. Temsamani, S. Kauffmann, Y. Descas, B. Vandevelde, F. Zanon, G. Willems

    • Resumen

    págs. 42-46

    

  • Analysis of errors in estimating wearout characteristics of time-dependent dielectric breakdown using system-level accelerated life test

    Dae Hyun Kim, Linda Milor

    • Resumen

    págs. 47-52

    

  • Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

    S. Moindjie, J. L. Autran, D. Munteanu, G. Gasiot, P. Roche

    • Resumen

    págs. 53-57

    

  • A new approach for Total Ionizing Dose effect analysis on Flash-based FPGA

    Qiutao Zhang, Sarah Azimi, Germano La Vaccara, Luca Sterpone, Boyang Du

    • Resumen

    págs. 58-63

    

  • A row hammer pattern analysis of DDR2 SDRAM

    M. Versen, W. Ernst, P. Gulati

    • Resumen

    págs. 64-67

    

  • Method for evaluation of transient-fault detection techniques

    R.A. Camponogara Viera, R. Possamai Bastos, J.-M. Dutertre, P. Maurine, R. Iga Jadue

    • Resumen

    págs. 68-74

    

  • Study of the impact of electromigration on integrated circuit performance and reliability at design level

    R.O. Nunes, R.L. de Orio

    • Resumen

    págs. 75-80

    

  • Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits

    Kexin Yang, Taizhi Liu, Rui Zhang, Dae Hyun Kim, Linda Milor

    • Resumen

    págs. 81-86

    

  • Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations

    Rui Zhang, Taizhi Liu, Kexin Yang, Linda Milor

    • Resumen

    págs. 87-91

    

  • Characterization of Low Drop-Out during ageing and design for yield

    R. Lajmi, F. Cacho, Eric Lauga, S. Bourdel, P. Benech, V. Huard, X. Federspiel

    • Resumen

    págs. 92-96

    

  • Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP)

    D. Helmut, G. Wachutka, G. Groos

    • Resumen

    págs. 97-101

    

  • A very unusual transistor failure, caused by a solenoid

    P. Jacob, R. Furrer

    • Resumen

    págs. 102-105

    

  • Uncertainty quantification in nanowire growth modeling – A precursor to quality semiconductor nanomanufacturing

    Chinedu I. Ossai, Xuechu Xu, Qing Yang, Nagarajan Raghavan

    • Resumen

    págs. 106-111

    

  • Lifetime and failure analysis of perovskite-based ceramic NTC thermistors by thermal cycling and abrasion combined stress

    Jae-Seong Jeong, Won-kyoung Lee, Chung-kuk Lee, Joongho Choi

    • Resumen

    págs. 112-116

    

  • Converter-level FEM simulation for lifetime prediction of an LED driver with improved thermal modelling

    H. Niu, H. Wang, X. Ye, S. Wang, Frede Blaabjerg

    • Resumen

    págs. 117-122

    

  • Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design

    Haoze Luo, Wuhua Li, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg

    • Resumen

    págs. 123-130

    

  • LER and spacing variability on BEOL TDDB using E-field mapping: Impact of field acceleration

    D. Kocaay, Ph.J. Roussel, K. Croes, Ivan Ciofi, Y. Saad, I. De Wolf

    • Resumen

    págs. 131-135

    

  • Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

    Maurits J. de Jong, Cora Salm, Jurriaan Schmitz

    • Resumen

    págs. 136-140

    

  • Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield pattern

    C.Q. Chen, G.B. Ang, P.T. Ng, Francis Rivai, S.P. Neo, D. Nagalingam, K.H. Yip, Jeffery Lam, Z.H. Mai

    • Resumen

    págs. 141-144

    

  • Carbon-related defects in microelectronics

    Vl. Kolkovsky, R. Stübner, J. Weber

    • Resumen

    págs. 145-148

    

  • Static and dynamic hot carrier accelerated TDDB: Influencing factors and impact on product lifetime

    Rainer Duschl, Armin H. Fischer, Achim Gratz, Robert Wiesner

    • Resumen

    págs. 149-153

    

  • A probe-based SEU detection method for SRAM-based FPGAs

    Luca Sterpone, Luca Boragno

    • Resumen

    págs. 154-158

    

  • Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies

    T. Rousselin, G. Hubert, D. Régis, M. Gatti, A. Bensoussan

    • Resumen

    págs. 159-163

    

  • The improvement of HEIP immunity using STI engineering at DRAM

    Seunguk Han, Youngyoun Lee, Yongdoo Kim, Jemin Park, Junhee Lim, Satoru Yamada, Hyeongsun Hong, Kyupil Lee, Gyoyoung Jin, Eunseung Jung

    • Resumen

    págs. 164-167