págs. 168-173
págs. 174-177
págs. 178-183
págs. 184-187
Lock-in thermal laser stimulation for non-destructive failure localization in 3-D devices
K.J.P. Jacobs, T. Wang, M. Stucchi, M. Gonzalez, K. Croes, I. De Wolf, E. Beyne
págs. 188-193
págs. 194-200
Effective scan chain failure analysis method
Etienne Auvray, Paul Armagnat, Luc Saury, Maheshwaran Jothi, Michael Brügel
págs. 201-213
Practical quantitative scanning microwave impedance microscopy
Oskar Amster, Fred Stanke, Stuart Friedman, Yongliang Yang, St.J. Dixon-Warren, B. Drevniok
págs. 214-217
págs. 218-221
págs. 222-226
Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies
M. Penzes, S. Dudit, F Monsieur, L. Silvestri, F. Nallet, D. Lewis, P. Perdu
págs. 227-232
págs. 233-237
Study of GHz-SAM sensitivity to delamination in BEOL layers
A. Khaled, Luka Ključar, S. Brand, M. Kögel, R. Aertgeerts, R. Nicasy, I. De Wolf
págs. 238-242
págs. 243-248
Pattern image enhancement by automatic focus correction
Alessandro Boscaro, S. Jacquir, K. Sanchez, P. Perdu, S. Binczak
págs. 249-254
Failure analysis methodology on donut pattern failure due to photovoltaic electrochemical effect
S.P. Neo, A.C.T. Quah, G.B. Ang, D. Nagalingam, H.H. Ma, S.L. Ting, C.W. Soo, C.Q. Chen, Z.H. Mai, J. C. Lam
págs. 255-260
C.Q. Chen, G.B. Ang, P.T. Ng, Francis Rivai, H.P. Ng, A.C.T. Quah, Ángel Teno, Jeffery Lam, Z.H. Mai
págs. 261-266
Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs
Bhagyalakshmi Kakarla, Selamnesh Nida, Johanna Mueting, Thomas Ziemann, Ivana Kovacevic-Badstuebner, Ulrike Grossner
págs. 267-271
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis
L. Ceccarelli, P.D. Reigosa, Francesco Iannuzzo, Frede Blaabjerg
págs. 272-276
págs. 277-281
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs
Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
págs. 282-286
págs. 287-291
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
M. Damman, M. Baeumler, V. Polyakov, P. Brückner, H. Konstanzer, R. Quay, M. Mikulla, A. Graff, M. Simon-Najasek
págs. 292-297
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
I. Rossetto, M. Meneghini, E. Canato, M. Barbato, Steve Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni
págs. 298-303
Exploring the thermal limit of GaN power devices under extreme overload conditions
F.P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
págs. 304-308
págs. 309-313
págs. 314-320
págs. 321-326
págs. 327-332
págs. 333-337
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