Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

• Autores: S. Moindjie, J. L. Autran, D. Munteanu, G. Gasiot, P. Roche
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 53-57
• Idioma: inglés
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• Resumen

  • Abstract Altitude and underground real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. Applied for both neutron-induced and alpha particle-induced SERs, this detailed analysis highlights the respective contributions of atmospheric radiation and alpha contamination to multiple cell upset mechanisms. It also offers a simple way to predict by simulation the radiation response of a given technology for any terrestrial position, as illustrated here for bulk 65 nm and 40 nm SRAMs.