págs. 650-654
Evaluation of heavy-ion impact in bulk and FDSOI devices under ZTC condition
W.E. Calienes, Y.Q. de Aguiar, C. Meinhardt, A. Vladimirescu, R. Reis
págs. 655-659
Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology
Y.Q. de Aguiar, L. Artola, G. Hubert, C. Meinhardt, Fernanda G. L. Kastensmidt, R.A.L. Reis
págs. 660-664
A low-level software-based fault tolerance approach to detect SEUs in GPUs' register files
Marcio Gonçalves, Mateus Saquetti, Fernanda Kastensmidt, Jose Rodrigo Azambuja
págs. 665-669
págs. 670-673
Effects of ageing on the conducted immunity of a voltage reference: Experimental study and modelling approach
S. Hairoud-Airieau, G. Duchamp, T. Dubois, J.-Y. Delétage, A. Durier, H. Frémont
págs. 674-679
págs. 680-684
págs. 685-691
New triggering-speed-characterization method for diode-triggered SCR using TLP
Mouna Mahane, D. Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, Lionel Jaouen
págs. 692-697
págs. 698-702
True dose rate physical mechanism of ELDRS effect in bipolar devices
V.S. Pershenkov, A.S. Petrov, A.S. Bakerenkov, V.N. Ulimov, V.A. Felitsyn, A.S. Rodin, V.V. Belyakov, V.A. Telets, V.V. Shurenkov
págs. 703-707
págs. 708-713
The total ionizing dose response of a DSOI 4Kb SRAM
B. Li, J. Wu, J. Gao, Y. Kuang, J. Li, X. Zhao, K. Zhao, Z. Han, J. Luo
págs. 714-718
págs. 719-724
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