Uncertainty quantification in nanowire growth modeling – A precursor to quality semiconductor nanomanufacturing

• Autores: Chinedu I. Ossai, Xuechu Xu, Qing Yang, Nagarajan Raghavan
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 106-111
• Idioma: inglés
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• Resumen

  • Abstract Mitigating the uncertainties associated with nanowire growth models have significant ramifications for the quality and reliability of nanomanufacturing of semiconductor nanowires. This research is focused on the development of a sectional-based mechanistic model of nanowire growth and the determination of the level of impacts the model parameters have on the growth of nanowires, characterized in terms of their weight, diameter and length. After testing the model with experimental growth data of silica (Si) nanowire weight, ZnO average diameter and length, it was observed that the direct top impingement growth coefficient (αim) had the largest influence on the nanowire growth, in comparison to other model parameters → sidewall diffusion growth coefficient (αsw), maximum allowable growth weight or length (W(max)) and initial weight or length (W0). The knowledge of the impact of uncertainty in these parameters on the overall growth of the nanowire can be leveraged on for robust design of the nanofabrication process that will impact on the quality, reliability, yield and cost of nanomanufacturing.