Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

• Autores: Thorsten Oeder, Alberto Castellazzi, Martin Pfost
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 321-326
• Idioma: inglés
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• Resumen

  • Abstract A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit.