Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs

• Autores: W. Saito, T. Naka
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 309-313
• Idioma: inglés
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• Resumen

  • Abstract A lack of unclamped inductive switching (UIS) withstanding capability of high-voltage GaN-HEMTs is a critical disadvantage for them. It is caused by poor removability of holes, which are generated by the avalanche breakdown. This paper shows the relations between the UIS withstanding capability and the static I-V characteristics are discussed to clarify the bottle neck factor for hole removal. From the UIS withstanding capability depending on the gate-leakage current, the crystal defect density around the gate would influence the withstanding capability.