Modelling of initial fast charge loss mechanism for logic embedded non-volatile memories

• Autores: J. Wu, C. Li, H. Wang, J. Li, L. Zheng
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 174-177
• Idioma: inglés
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• Resumen

  • Abstract An analytical model of the initial fast charge loss mechanism for the logic embedded non-volatile memory (eNVM) is proposed in this paper for the first time. The charge loss phenomenon is caused by the contact-etch-stop-layer (CESL) capacitive effect, which screens part of the charge in the floating gate of the memory cell. Empirical equations are proposed to describe the formation process of the CESL capacitive effect, and the proposed model fits the experimental results excellently including the temperature dependence. The new model will be very helpful for the designers to accurately predict the memory's data retention capability. Furthermore, it can also be used to improve the initial fast charge loss of the logic eNVM.