págs. 169-172
Life prediction methodology of system-in-package based on physics of failure
Guicui Fu, Yutai Su, Wendi Guo, Bo Wan, Zhongqing Zhang, Ye Wang
págs. 173-178
Effect of DC/AC stress on the reliability of cell capacitor in DRAM
Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jungeun Seok, Yunsung Lee
págs. 179-182
Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM
Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jungeun Seok, Yunsung Lee
págs. 183-185
págs. 186-190
págs. 191-195
Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies
R.B. Almeida, C.M. Marques, Paulo Francisco Butzen, F.R.G. Silva, R.A.L. Reis, C. Meinhardt
págs. 196-202
Electrically induced physical damage (EIPD) cases study: From electrical overstress (EOS) to product defects
págs. 203-207
págs. 208-213
An efficient EDAC approach for handling multiple bit upsets in memory array
Roger C. Goerl, Paulo Ricardo Cechelero Villa, Letícia B. Poehls, Eduardo Augusto Bezerra, Fabian L. Vargas
págs. 214-218
Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests
Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama
págs. 219-224
págs. 225-229
págs. 230-235
Unified view on energy and electrical failure of the short-circuit operation of IGBTs
R. Baburske, F. J. Niedernostheide, H. J. Schulze, Riteshkumar Bhojani, J. Kowalski, J. Lutz
págs. 236-241
págs. 242-245
págs. 246-249
págs. 250-254
págs. 255-261
págs. 262-266
págs. 267-272
Photon emission as a characterization tool for bipolar parasitics in FinFET technology
A. Beyreuther, N. Herfurth, E. Amini, T. Nakamura, I. De Wolf, C. Boit
págs. 273-276
págs. 277-281
págs. 282-287
New defect detection approach using near electromagnetic field probing of high density PCBAs
Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard
págs. 288-293
Complex automotive ICs defect localization driven by quiescent power supply current: Three cases study
págs. 294-298
T. Schaffus, P. Albert, W. Breuer, D. Debie, M. Graml, C. Hollerith, F. Kroninger, W. Mack, H. Pfaff, M. Schaffus, J. Walter
págs. 299-303
págs. 304-308
págs. 309-314
págs. 315-320
Failure analysis on 14 nm FinFET devices with ESD CDM failure
C. Shaalini, P. K. Tan, Y.Z. Zhao, B.H. Liu, Y.Z. Ma, A. Quah, Y.-L. Pan, J.B.H. Tan, Z.H. Mai
págs. 321-333
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