Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests

• Autores: Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 88-90, 2018, págs. 219-224
• Idioma: inglés
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• Resumen

  • The electromagnetic compatibility (EMC) study is an indispensable step in the development cycle of power system modules. In power applications using normally off transistors, short-circuit mode can be recurrent during operation, especially when powering converters. In this paper, we present a study on the evolution of conducted interferences (in common and differential mode voltages) generated by a static converter after an aging test of silicon carbide (SiC) MOSFET transistors from the first generation of CREE subjected to repetitive short-circuit operations. This work presents an experimental investigation of the repetitive short-circuit aging effect of N Channel power SiC MOSFETs on the amplitude of resonances in the interference spectra after aging tests. Experimental results are presented and analyzed.