Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance
págs. 1-6
págs. 7-21
págs. 22-30
Bias temperature instability in scaled CMOS technologies: A circuit perspective
págs. 31-40
págs. 41-63
A fast and flexible HW/SW co-processing framework for Time-of-Flight 3D imaging
Norbert Druml, Christoph Ehrenhoefer, Walter Bell, Christian Gailer, Hannes Plank, Thomas Herndl, Gerald Holweg
págs. 64-76
An improved reliability model for Si and GaN power FET
Gady Golan, Moshe Azoulay, Tsuriel Avraham, Ilan Kremenetsky, Joseph B. Bernstein
págs. 77-89
págs. 90-94
págs. 95-100
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits
Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang
págs. 101-111
págs. 112-116
Recovery behaviors in n-channel LTPS-TFTs under DC stress
Wei Yan, Zhinong Yu, Jian Guo, Dawei Shi, Jianshe Xue, Wei Xue
págs. 117-120
págs. 121-126
págs. 127-135
A review on discoloration and high accelerated testing of optical materials in LED based-products
M. Yazdan Mehr, M.R. Toroghinejad, F. Karimzadeh, W.D. van Driel, G.Q. Zhang
págs. 136-142
A new hermetic sealing method for ceramic package using nanosilver sintering technology
Zhi-Hao Zhang, Yang Liu, Lingen Wang, Jiajie Fan, Xuejun Fan, Fenglian Sun, Guoqi Zhang
págs. 143-149
págs. 150-158
Using GA-SVM for defect inspection of flip chips based on vibration signals
Ke Li, Lingyun Wang, JingJing Wu, Qiuju Zhang, Guanglan Liao, Lei Su
págs. 159-166
Fault tolerant encoders for Single Error Correction and Double Adjacent Error Correction codes
Shanshan Liu, Pedro Reviriego Vasallo, Juan Antonio Maestro, Liyi Xiao
págs. 167-173
Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET
Mitchell D. Kelley, Bejoy N. Pushpakaran, Argenis V. Bilbao, James A. Schrock, Stephen B. Bayne
págs. 174-180
Mechanical stress effects on electrical breakdown of freestanding GaN thin films
Tun Wang, Baoming Wang, Aman Haque, Michael Snure, Eric Heller, Nicholas Glavin
págs. 181-185
B. Kaczer, J. Franco, P. Weckx, Ph.J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser
págs. 186-194
Analysis of low isolation problem in HMC using Ishikawa model: A case study
G. Jayaprasad, P.P. Dhanalakshmi, M. Baskaran, S. Hemachandran
págs. 195-200
págs. 201-209
Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds
págs. 210-217
págs. 218-225
págs. 226-231
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págs. 244-251
Fast identification of true critical paths in sequential circuits
Raimund Ubar, Sergei Kostin, Maksim Jenihhin, Jaan Raik, Lembit Jürimägi
págs. 252-261
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