Microelectronics reliability

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  Año 2016, Número 59

  • Editorial Board

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    págs. 1-1

    

  • Creep fatigue models of solder joints: A critical review

    E.H. Wong, W.D. van Driel, A. Dasgupta, M. Pecht

    • Resumen
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    págs. 1-12

    

  • Degradation of pMOSFETs due to hot electron induced punchthrough

    Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang

    • Resumen
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    págs. 13-17

    

  • Degradation study of single poly radiation sensors by monitoring charge trapping

    Evgeny Pikhay, Yakov Roizin, Yael Nemirovsky

    • Resumen
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    págs. 18-25

    

  • Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs

    Nebojsa D. Jankovic, Chadwin D. Young

    • Resumen
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    págs. 26-29

    

  • Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket

    Ping Wang, YiQi Zhuang, Cong Li, Zhi Jiang, YuQi Liu

    • Resumen
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    págs. 30-36

    

  • Electrical characteristics of a-IGZO transistors along the in-plane axis during outward bending

    Chang Bum Park, HyungIl Na, Soon Sung Yoo, Kwon-Shik Park

    • Resumen
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    págs. 37-43

    

  • The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

    Hsien-Chin Chiu, Ji-Fan Chi, Hsuan-Ling Kao, Chia-Yi Chu, Kuan-Liang Cho, Feng-Tso Chien

    • Resumen
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    págs. 44-48

    

  • An improved modeling for life prediction of high-power white LED based on Weibull right approximation method

    Jianping Zhang, Wenlong Chen, Chen Wang, Xiao Chen, Guoliang Cheng, Yingji Qiu, Helen Wu

    • Resumen
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    págs. 49-54

    

  • Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current

    Jian Guan, Shuxu Guo, Jinyuan Wang, Min Tao, Junsheng Cao, Fengli Gao

    • Resumen
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    págs. 55-59

    

  • Investigation of MBE grown inverted GaAs quantum dots

    Ákos Nemcsics, Bálint Pődör, Lajos Tóth, János Balázs, László Dobos, János Makai, Márton Csutorás, Antal Ürmös

    • Resumen
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    págs. 60-63

    

  • Thermo-fluid simulation for the thermal design of the IGBT module in the power conversion system

    Chang-Woo Han, Seung-Boong Jeong, Myung-Do Oh

    • Resumen
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    págs. 64-72

    

  • Quantification of cracked area in thermal path of high-power multi-chip modules using transient thermal impedance measurement

    Mohd. Amir Eleffendi, Li Yang, Pearl Agyakwa, C. Mark Johnson

    • Resumen
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    págs. 73-83

    

  • Heat dissipation assessment of through silicon via (TSV)-based 3D IC packaging for CMOS image sensing

    Hsien-Chie Cheng, Tzu-Chin Huang, Po-Wen Hwang, Wen-Hwa Chen

    • Resumen
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    págs. 84-94

    

  • Validation of TSV thermo-mechanical simulation by stress measurement

    Wei Feng, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi

    • Resumen
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    págs. 95-101

    

  • Design considerations for the mechanical integrity of airgaps in nano-interconnects under chip–package interaction; a numerical investigation

    Houman Zahedmanesh, Mario González, Ivan Ciofi, Kristof Croes, Jürgen Bömmels, Zsolt Tőkei

    • Resumen
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    págs. 102-107

    

  • B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages

    A. Cowley, A. Ivankovic, C.S. Wong, N.S. Bennett, A.N. Danilewsky, M. Gonzalez, V. Cherman, B. Vandevelde, I. De Wolf, P.J. McNally

    • Resumen
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    págs. 108-116

    

  • Optimization of thermo-mechanical reliability of solder joints in crystalline silicon solar cell assembly

    M.T. Zarmai, N.N. Ekere, C.F. Oduoza, E.H. Amalu

    • Resumen
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    págs. 117-125

    

  • A thermal cycling reliability study of ultrasonically bonded copper wires

    Elaheh Arjmand, Pearl A. Agyakwa, Martin R. Corfield, Jianfeng Li, Bassem Mouawad, C. Mark Johnson

    • Resumen
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    págs. 126-133

    

  • Evaluation of hybrid bonding technology of single-micron pitch with planar structure for 3D interconnection

    Masaki Ohyama, Masatsugu Nimura, Jun Mizuno, Shuichi Shoji, Toshihisa Nonaka, Yoichi Shinba, Akitsu Shigetou

    • Resumen
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    págs. 134-139

    

  • Book Review: Fundamentals of Bias Temperature Instability in MOS Transistors. Springer (2016)

    Chong Leong Gan

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    págs. 140-140