Degradation study of single poly radiation sensors by monitoring charge trapping

• Autores: Evgeny Pikhay, Yakov Roizin, Yael Nemirovsky
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 59, 2016, págs. 18-25
• Idioma: inglés
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  • Abstract Special test structures emulating the performance of C-sensor, a direct floating gate (FG) ionizing radiation sensor, were used to investigate its degradation under Gamma radiation. Original MOS transistors with bulks made of crystalline silicon and Poly allowed minimizing the number of irradiations required to study the peculiarities of charge accumulation in the dielectrics of C-sensors. Electrical characterization of the developed structures before and after the exposure to different doses of Gamma radiation was performed. The guidelines for improving sensor immunity to radiation degradation are discussed.