The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

• Autores: Hsien-Chin Chiu, Ji-Fan Chi, Hsuan-Ling Kao, Chia-Yi Chu, Kuan-Liang Cho, Feng-Tso Chien
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 59, 2016, págs. 44-48
• Idioma: inglés
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  • Abstract In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF4 and CHF3 plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability.