Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology

• Autores: Y.Q. de Aguiar, L. Artola, G. Hubert, C. Meinhardt, Fernanda G. L. Kastensmidt, R.A.L. Reis
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 660-664
• Idioma: inglés
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• Resumen

  • Abstract Radiation-induced soft error is an ever-increasing concern in the microelectronic industry in order to provide reliable VLSI systems at advanced technology nodes. Most of the redundancy-based methodologies adopt majority voters to ensure the fault masking. This paper presents a comparative analysis of different majority voter designs in 7 nm FinFET under radiation effects. The MUSCA SEP3 tool is used to estimate the SER of each circuit. Results show that NOR voter is less sensitive than the NAND voter. However, the SET pulse width is larger for the NOR voter than NAND voter.