Microelectronics reliability

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  Año 2016, Número 58

  • Editorial Board

    • Texto completo

    págs. 1-1

    

  • Reliability issues in power electronics

    Francesco Iannuzzo, Mauro Ciappa

    • Texto completo

    págs. 1-2

    

  • A new thermal model for power MOSFET devices accounting for the behavior in unclamped inductive switching

    Angelo Raciti, Salvatore Musumeci, Filippo Chimento, Giovanni Privitera

    • Resumen
    • Texto completo

    págs. 3-11

    

  • Electro-thermal simulation of current sharing in silicon and silicon carbide power modules under short circuit condition of types I and II

    Hiroshi Suzuki, Mauro Ciappa

    • Resumen
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    págs. 12-16

    

  • On the avalanche ruggedness of optimized termination structure for 600 V punch-through IGBTs

    Paolo Mirone, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace

    • Resumen
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    págs. 17-25

    

  • A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating

    E. Efthymiou, P. Rutter, P. Whiteley

    • Resumen
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    págs. 26-32

    

  • Modeling the threshold voltage instability in SiC MOSFETs by multiphonon-assisted tunneling

    Takuo Kikuchi, Mauro Ciappa

    • Resumen
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    págs. 33-38

    

  • Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

    Gerald Soelkner

    • Resumen
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    págs. 39-50

    

  • The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination

    Munaf Rahimo, Frank Richter, Fabian Fischer, Umamaheswara Vemulapati, Arnost Kopta, Chiara Corvasce, Silvan Geissmann, Marco Bellini, Martin Bayer, Friedhelm Bauer

    • Resumen
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    págs. 51-57

    

  • Comprehensive physical analysis of bond wire interfaces in power modules

    Vladimir N. Popok, Kristian B. Pedersen, Peter K. Kristensen, Kjeld Pedersen

    • Resumen
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    págs. 58-64

    

  • Interface reliability and lifetime prediction of heavy aluminum wire bonds

    B. Czerny, G. Khatibi

    • Resumen
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    págs. 65-72

    

  • Techniques for dynamic analysis of bonding wire

    R. Saritas, M. Khater, S. Park, T. Dagdelen, E. Abdel-Rahman, M. Yavuz

    • Resumen
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    págs. 73-81

    

  • Requirements in power cycling for precise lifetime estimation

    Christian Herold, Jörg Franke, Riteshkumar Bhojani, Andre Schleicher, Josef Lutz

    • Resumen
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    págs. 82-89

    

  • On-state voltage drop based derating/uprating on a MW converter to improve reliability

    P. Ghimire, I. Trintis, S. Munk-Nielsen, B. Rannestad

    • Resumen
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    págs. 90-94

    

  • Reliability of photovoltaic systems using seasonal mission profiles and the FIDES methodology

    Susana de Leon, Hugo Calleja, Jesus Mina

    • Resumen
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    págs. 95-102

    

  • How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies

    A. Bensoussan

    • Resumen
    • Texto completo

    págs. 103-112

    

  • Observer based dynamic adaptive cooling system for power modules

    Xiang Wang, Alberto Castellazzi, Pericle Zanchetta

    • Resumen
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    págs. 113-118

    

  • Study of reliability-efficiency tradeoff of active thermal control for power electronic systems

    Markus Andresen, Giampaolo Buticchi, Marco Liserre

    • Resumen
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    págs. 119-125

    

  • A simple 1-D finite elements approach to model the effect of PCB in electronic assemblies

    D. Chiozzi, M. Bernardoni, N. Delmonte, P. Cova

    • Resumen
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    págs. 126-132

    

  • Comparison of reliability impacts of two active power curtailment methods for PV micro-inverters

    Ognjen Gagrica, Mateusz Marzec, Tadeusz Uhl

    • Resumen
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    págs. 133-140

    

  • Modern IGBT gate driving methods for enhancing reliability of high-power converters — An overview

    Haoze Luo, Francesco Iannuzzo, Paula Diaz Reigosa, Frede Blaabjerg, Wuhua Li, Xiangning He

    • Resumen
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    págs. 141-150

    

  • Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

    Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni

    • Resumen
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    págs. 151-157

    

  • Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)

    Osamu Kusumoto, Atsushi Ohoka, Nobuyuki Horikawa, Kohtaro Tanaka, Masahiko Niwayama, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda

    • Resumen
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    págs. 158-163

    

  • SiC power MOSFETs performance, robustness and technology maturity

    A. Castellazzi, A. Fayyaz, G. Romano, L. Yang, M. Riccio, A. Irace

    • Resumen
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    págs. 164-176

    

  • Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

    M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti, G. Strasser, D. Pogany, E. Bahat-Treidel, F. Brunner, A. Knauer, J. Würfl, I. Rossetto, E. Zanoni, G. Meneghesso, S. Dalcanale

    • Resumen
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    págs. 177-184

    

  • Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor

    Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa

    • Resumen
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    págs. 185-191

    

  • Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures

    Zhaoyang Peng, Yiyu Wang, Huajun Shen, Chengzhan Li, Jia Wu, Yun Bai, Kean Liu, Xinyu Liu

    • Resumen
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    págs. 192-196

    

  • Lifetime tests of 600-V GaN-on-Si power switches and HEMTs

    K.V. Smith, J. Haller, Josep M. Guerrero, R.P. Smith, R. Lal, Y. F. Wu

    • Resumen
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    págs. 197-203

    

  • Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions

    A. Ibrahim, J.P. Ousten, R. Lallemand, Z. Khatir

    • Resumen
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    págs. 204-210