Modern IGBT gate driving methods for enhancing reliability of high-power converters — An overview

• Autores: Haoze Luo, Francesco Iannuzzo, Paula Diaz Reigosa, Frede Blaabjerg, Wuhua Li, Xiangning He
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 58, 2016, págs. 141-150
• Idioma: inglés
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  • Abstract This paper presents a survey of existing gate driving approaches for improving reliability of Insulated Gate Bipolar Transistors (IGBTs). An extensive and various lists of techniques are introduced and discussed, including fast detection, identification and protection against IGBT failures, also considering cost-effective solutions. Gate-driver circuit solutions to improve short-circuit robustness, overload, voltage and current overshoots withstanding capability are first introduced to cope with abnormal conditions severely affecting lifetime expectation. Later, some advanced, state-of-the-art control techniques are discussed to minimize the real-mission-profile stresses in terms of voltage and current stresses to the device, together with, not least, temperature variations. Future challenges and perspectives are finally discussed at the end of the paper.