Microelectronics reliability

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  Año 2018, Número 88-90

  • Surge protection design with surge-to-digital converter for microelectronic circuits and systems

    Wen-Chieh Chen, Ming-Dou Ker

    • Resumen

    págs. 2-5

    

  • A lightweight write-assist scheme for reduced RRAM variability and power

    H. Aziza, B. Hajri, M. Mansour, A. Chehab, A. Pérez

    • Resumen

    págs. 6-10

    

  • Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra

    I. Vogt, T. Nakamura, B. Motamedi, C. Boit

    • Resumen

    págs. 11-15

    

  • An acoustic emission sensor system for thin layer crack detection

    M. Unterreitmeier, O. Nagler, L. Pfitzner, Robert Weigel, R. Holmer

    • Resumen

    págs. 16-21

    

  • IC security and quality improvement by protection of chip backside against hardware attacks

    E. Amini, A. Beyreuther, N. Herfurth, A. Steiger-Garçao, R. Muydinov, B. Szyszka, C. Boit

    • Resumen

    págs. 22-25

    

  • Reliability concerns from the gray market

    Giovanna Mura

    • Resumen

    págs. 26-30

    

  • Experimental studies of: Laminate composition, drill bit wear out, and chloride ion concentration as factors affecting CAF formation rate

    M. Baszyński, P. Rydygier, M. Wójcik

    • Resumen

    págs. 31-37

    

  • Performance-reliability trade-offs in short range RF power amplifier design

    S.M. Pazos, F.L. Aguirre, F. Palumbo, F. Silveira

    • Resumen

    págs. 38-42

    

  • Smart SiC MOSFET accelerated lifetime testing

    Nick Baker, Francesco Iannuzzo

    • Resumen

    págs. 43-47

    

  • A novel crowdsourcing platform for microelectronics counterfeit defect detection

    Bahar Ahmadi, Pouya Tavousi, Joseph Favata, Peiman Shahbeigi-Roodposhti, Rengarajan Pelapur, Sina Shahbazmohamadi

    • Resumen

    págs. 48-53

    

  • Physics-of-Failure (PoF) methodology for qualification and lifetime assessment of supercapacitors for industrial applications

    A.B. Temsamani, S. Kauffmann, S. Helsen, T. Gaens, V. Driesen

    • Resumen

    págs. 54-60

    

  • Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories

    Julien Coutet, François Marc, Flavien Dozolme, Romain Guétard, Aurélien Janvresse, Pierre Lebossé, Antonin Pastre, Jean-Claude Clement

    • Resumen

    págs. 61-66

    

  • Lock-in thermography for defect localization and thermal characterization for space application

    M. Mousnier, K. Sanchez, E. Locatelli, T. Lebey, V. Bley

    • Resumen

    págs. 67-74

    

  • Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields

    Mingyao Ma, Kaiqi Chu, Mingyue Zhan, Ye Wang, Fang Liu

    • Resumen

    págs. 75-79

    

  • Application of multi-output Gaussian process regression for remaining useful life prediction of light emitting diodes

    Pham Luu Trung Duong, Hyunseok Park, Nagarajan Raghavan

    • Resumen

    págs. 80-84

    

  • Gaussian process regression approach for robust design and yield enhancement of self-assembled nanostructures

    Pham Luu Trung Duong, Xuechu Xu, Qing Yang, Nagarajan Raghavan

    • Resumen

    págs. 85-90

    

  • Design and implementation of reliable flash ADC for microwave applications

    G. Prathiba, M. Santhi, A. Ahilan

    • Resumen

    págs. 91-97

    

  • In-situ transistor reliability measurements through nanoprobing

    O. Dixon-Luinenburg, J. Fine

    • Resumen

    págs. 98-102

    

  • Investigation of artificial neural network algorithm based IGBT online condition monitoring

    Xiaoman Sun, Meng Huang, Yi Liu, Xiaoming Zha

    • Resumen

    págs. 103-106

    

  • Manufacturing process-based storage degradation modelling and reliability assessment

    X. Ye, Y. Lin, C.Q. Wang, H. Niu, G. Zhai

    • Resumen

    págs. 107-110

    

  • Impact of different transistor arrangements on gate variability

    A.L. Zimpeck, C. Meinhardt, L. Artola, G. Hubert, Fernanda G. L. Kastensmidt, R.A.L. Reis

    • Resumen

    págs. 111-115

    

  • Evaluation of variability using Schmitt trigger on full adders layout

    L.B. Moraes, A.L. Zimpeck, C. Meinhardt, R. Reis

    • Resumen

    págs. 116-121

    

  • A body built-in cell for detecting transient faults and dynamically biasing subcircuits of integrated systems

    Thiago Ferreira de Paiva Leite, Laurent Fesquet, Rodrigo Possamai Bastos

    • Resumen

    págs. 122-127

    

  • Assessing body built-in current sensors for detection of multiple transient faults

    R.A.C. Viera, J.-M. Dutertre, M.-L. Flottes, O. Potin, G. Di Natale, B. Rouzeyre, R. Possamai Bastos

    • Resumen

    págs. 128-134

    

  • NBTI and irradiation related degradation mechanisms in power VDMOS transistors

    N. Stojadinovic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Stankovic, A. Prijić, Z. Prijić, I. Manic, D. Dankovic

    • Resumen

    págs. 135-141

    

  • A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory

    A. Rodríguez Fernández, J. Muñoz-Gorriz, J. Suñé, E. Miranda

    • Resumen

    págs. 142-146

    

  • Towards understanding recovery of hot-carrier induced degradation

    Maurits J. de Jong, Cora Salm, Jurriaan Schmitz

    • Resumen

    págs. 147-151

    

  • Variation-resilient quantifiable plasma process induced damage monitoring

    D. Beckmeier, A. Martin

    • Resumen

    págs. 152-158

    

  • Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction

    V. Della Marca, J. Postel-Pellerin, T. Kempf, A. Regnier, P. Chiquet, M. Bocquet

    • Resumen

    págs. 159-163

    

  • Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress

    Xuan Feng, N. Raghavan, S. Mei, S. Dong, K.L. Pey, H. Wong

    • Resumen

    págs. 164-168