Performance-reliability trade-offs in short range RF power amplifier design

• Autores: S.M. Pazos, F.L. Aguirre, F. Palumbo, F. Silveira
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 88-90, 2018, págs. 38-42
• Idioma: inglés
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• Resumen

  • In this work, trade-offs between performance and reliability in CMOS RF power amplifiers at the design stage are studied. The impact of transistor sizing, amplifier class and on-chip matching network design are explored for a 130 nm technology and the implications of design decisions in transistor gate oxide reliability are discussed and projected. A strong trade-off is observed between efficiency and reliability, mainly for different on-chip output matching architectures. A comparison between two example designs is performed via SPICE simulations that include reliability models and the effects of aging on the stress conditions of each amplifier.