Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories

• Autores: Julien Coutet, François Marc, Flavien Dozolme, Romain Guétard, Aurélien Janvresse, Pierre Lebossé, Antonin Pastre, Jean-Claude Clement
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 88-90, 2018, págs. 61-66
• Idioma: inglés
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• Resumen

  • This paper presents an analysis of the reliability of 20 nm technology NAND Flash memory components based on Multiple Level Cells (MLC). The focus of the study is to assess the influence of temperature during programming, storage and reading operations. In order to reach this goal, several memories were programmed once at many temperatures ranging from −40 °C to 85 °C, then they have been stored powered off in one case and have been activated in reading in the other case, under different thermal stresses.