IEICE transactions on electronics

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  Año 2006, Vol. 89, Número 7

  • Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress (INVITED)

    H. Hasegawa, S. Kasai, Takashi Sato

    pág. 874

    

  • InP DHBT Integrated Circuits for Fiber-Optic High-Speed Applications (INVITED)

    J. Moulu, P. Berdaguer, F. Jorge, J. Godin, A. Konczykowska, M. Riet

    pág. 883

    

  • Novel Devices for (Sub)millimeter-Wave Space Applications (INVITED)

    T. S. Cherednichenko, J. V. Grahn, P. Starski, J. Stake

    pág. 891

    

  • RF MEMS-Enabling Technology for Millimeter-Waves (INVITED)

    Y. Kwon, S. Lee

    pág. 898

    

  • Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy (INVITED)

    T. Palacios, S. Rajan, U. K. Mishra, J. S. Speck, A. Corrion, C. Poblenz, P. Waltereit

    pág. 906

    

  • Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs (INVITED)

    A. Matulionis

    pág. 913

    

  • Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si~0~.~7Ge~0~.~3 Virtual Substrates (INVITED)

    M. Stoffel, Jian Zhang, O. G. Schmidt

    pág. 921

    

  • Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors (INVITED)

    N. Dyakonova, W. Knap, J. Usa Kowski, F. Teppe

    pág. 926

    

  • InP DHBT Based IC Technology for over 80 Gbit/s Data Communications

    U. Nowotny, R. Aidam, R. Quay, M. Schlechtweg, R. Driad, R. E. Makon, K. Schneider

    pág. 931

    

  • Microwave Class-F InGap/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies

    M. Seki, R. Ishikawa

    pág. 937

    

  • Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation

    T. Taniguchi, K. Mochizuki, K. I. Tanaka, T. Shiota

    pág. 943

    

  • Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs

    M. Tokumitsu, H. Matsuzaki, T. Maruyama, T. Enoki

    pág. 949

    

  • W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-thetam Gate InP-Based HEMTs

    K. Inafune, E. Sano, H. Matsuzaki

    pág. 954

    

  • HEMT CCD Matched Filter for Spread Spectrum Communication

    K. Kawaguchi, T. Sugiyama, E. Nishimori, S. Ono

    pág. 959

    

  • Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes

    M. Asada, N. Orihashi

    pág. 965

    

  • Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer

    M. Ishida, N. Machida, K. Furuya, Y. Miyamoto, R. Nakagawa, I. Kashima

    pág. 972

    

  • A Design of Continuous-Time Delta-Sigma Modulators Using a Fully-Differential Resonant-Tunneling Comparator

    M. Tanihata, K. Eguchi, M. Chibashi, S. Nakagawa

    pág. 979

    

  • Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer

    T. Otsuji, M. Hanabe, T. Nishimura, M. Miyamoto

    pág. 985

    

  • Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors

    W. Knap, D. Seliuta, E. Sirmulis, J. Devenson, G. Valusis, Yahya Moubarak Meziani, J. Usa Kowski, N. Dyakonova

    pág. 993

    

  • Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation

    T. Mizutani, Y. Ookawa, S. Kishimoto, K. Maezawa

    pág. 999

    

  • Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer

    T. Nishimura, M. Hanabe, M. Miyamoto

    pág. 1005

    

  • Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect

    V. Ryzhii, A. Satou, M. S. Shur

    pág. 1012

    

  • Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities

    H. Ono, S. Taniguchi, T. K. Suzuki

    pág. 1020

    

  • Enhancement-Mode AIGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage

    K. J. Chen, Y. Cai, Y. Zhou, K. M. Lau

    pág. 1025

    

  • A Mechanism of Enhancement-Mode Operation of AIGaN/GaN MIS-HFET

    D. Kikuta, J. P. Ao, J. Matsuda

    pág. 1031

    

  • Strain Sensitivity of AIGaN/GaN HEMT Structures for Sensing Applications

    O. Yilmazoglu, K. Mutamba, D. Pavlidis

    pág. 1037

    

  • Temperature and Illumination Dependence of AIGaN/GaN HFET Threshold Voltage

    J. P. Ao, Y. Ohno, K. Okada, R. Takaki, D. Kikuta

    pág. 1042

    

  • Improvement of CO Sensitivity in GaN-Based Gas Sensors

    S. M. Hubbard, E. Cho, D. Pavlidis, G. Y. Zhao

    pág. 1047

    

  • Influence of NH~3-Plasma Pretreatment before Si~3N~4 Passivation Film Deposition on Current Collapse in AIGaN/GaN-HEMTs

    Y. Sano, S. Hoshi, T. Marui, M. Itoh

    pág. 1052

    

  • Cubic GaN/AIGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation

    J. Fernandez, J. Schormann, D. J. As, K. Lischka, M. Abe, H. Nagasawa, S. Potthast

    pág. 1057