Microelectronics reliability

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  Año 2018, Número 91-2

  • Failure mechanisms of solder interconnects under current stressing in advanced electronic packages: An update on the effect of alternating current (AC) stressing

    Ze Zhu, Yan-Cheong Chan, Fengshun Wu

    • Resumen

    págs. 179-182

    

  • Normalized differential conductance to study current conduction mechanisms in MOS structures

    T.H. Nouibat, Z. Messai, D. Chikouch, Z. Ouennoughi, N. Rouag, M. Rommel, L. Frey

    • Resumen

    págs. 183-187

    

  • A critical analysis of the bulk current injection immunity test based on common-mode and differential-mode

    Ligang Tan, Ziwen Li, Yunxiu Xiang, Pengfei Feng, Yage Guo

    • Resumen

    págs. 188-193

    

  • Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures

    Zheng Zhao, Ningyue Jiang, Zhenqiang Ma, Guoxuan Qin

    • Resumen

    págs. 194-200

    

  • Influence of multi-walled carbon nanotube (MWCNT) concentration on the thermo-mechanical reliability properties of solderable anisotropic conductive adhesives (SACAs)

    Byung-Seung Yim, Young-Eui Shin, Jong-Min Kim

    • Resumen

    págs. 201-212

    

  • Failure study of Sn37Pb PBGA solder joints using temperature cycling, random vibration and combined temperature cycling and random vibration tests

    Tong An, Chao Fang, Fei Qin, Huaicheng Li, Tao Tang, Pei Chen

    • Resumen

    págs. 213-226

    

  • Thermal performance analysis of GaN nanowire and fin-shaped power transistors based on self-consistent electrothermal simulations

    Hamed Kamrani, Feng Yu, Kristian Frank, Klaas Strempel, Muhammad Fahlesa Fatahilah, Hutomo Suryo Wasisto, Friedhard Römer, Andreas Waag, Bernd Witzigmann

    • Resumen

    págs. 227-231

    

  • Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness

    Sean P. Ogden, Yueming Xu, Kong Boon Yeap, Tian Shen, Toh-Ming Lu, Joel L. Plawsky

    • Resumen

    págs. 232-242

    

  • Investigation of DNA sequencing droplet trajectory observation and analysis

    Jian-Chiun Liou, Cheng-Fu Yang

    • Resumen

    págs. 243-250

    

  • Experimental determination of the Young's modulus of copper and solder materials for electronic packaging

    F. Kraemer, M. Roellig, René Metasch, J. Ahmar, Karsten Meier, S. Wiese

    • Resumen

    págs. 251-256

    

  • An artificial neural network approach for wafer dicing saw quality prediction

    Te-Jen Su, Yi-Feng Chen, Jui-Chuan Cheng, Chien-Liang Chiu

    • Resumen

    págs. 257-261

    

  • Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location

    Kosala Yapabandara, Vahid Mirkhani, Shiqiang Wang, Min P. Khanal, Sunil Uprety, Tamara Isaacs-Smith, M. C. Hamilton, Minseo Park

    • Resumen

    págs. 262-268

    

  • A novel single-event-hardened charge pump using cascode voltage switch logic gates

    Zhizhan Yang, Xiaodong Xie, Xue Fan, Yubo Ren

    • Resumen

    págs. 269-277

    

  • Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology

    Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang

    • Resumen

    págs. 278-282

    

  • Behavior of Au and Pd and the effects of these metals on IMCs in Pd-Au-coated copper wire

    Hyun-Woong Park, Sang-Jun Lee, Dong-Chul Cho, Sang-Hoon Lee, Jae-Kyun Kim, Jun-Hee Lee, Sang-Kyo Jung, Hong-Sik Nam, Patrick Hsu, Shin Low, Sung-Hwan Lim

    • Resumen

    págs. 283-290

    

  • Transistor open-circuit fault diagnosis in two-level three-phase inverter based on similarity measurement

    Cuicui Hang, Liming Ying, Naiqiu Shu

    • Resumen

    págs. 291-297

    

  • Evaluation of statistical variability and parametric sensitivity of non-uniformly doped Junctionless FinFET

    Shalu Kaundal, Ashwani K. Rana

    • Resumen

    págs. 298-305

    

  • Wide Bandgap Materials for Semiconductor Devices

    Kuan-Wei Lee, Chuan-Hsi Liu, Durga Misra

    págs. 306-306

    

  • A closed-form trapped-charge-included drain current compact model for amorphous oxide semiconductor thin-film transistors

    Fei Yu, Chuanzhong Xu, Gongyi Huang, Chun-Wei Lin, Tsair-Chun Liang

    • Resumen

    págs. 307-312

    

  • Infrared response of vanadium oxide (VOx)/SiNx/reduced graphene oxide (rGO) composite microbolometer

    Zheng-Yuan Wu, Shiang-Feng Tang, Hong-Yuan Zeng, Wen-Jen Lin, Tzu-Chiang Chen, Yau-Tang Gau

    • Resumen

    págs. 313-318

    

  • SiO2 tunneling and Si3N4/HfO2 trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices

    Hsin-Kai Fang, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, Po-Yao Lin, Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh

    • Resumen

    págs. 319-322

    

  • Pentacene bottom-contact thin film transistors with solution-processed BZT gate dielectrics

    Dei-Wei Chou, Kuan-Lin Chen, Shih-Feng Wang

    • Resumen

    págs. 323-329

    

  • Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current

    Kai-Huang Chen, Chien-Min Cheng, Cheng-Ying Li, Shou-Jen Huang

    • Resumen

    págs. 330-334

    

  • A theoretical model for calculating the effects of carrier heating with nonequilibrium hot phonons on semiconductor devices and the current-voltage relations

    Chin-Yi Tsai

    • Resumen

    págs. 335-343