Failure mechanisms of solder interconnects under current stressing in advanced electronic packages: An update on the effect of alternating current (AC) stressing
págs. 179-182
Normalized differential conductance to study current conduction mechanisms in MOS structures
T.H. Nouibat, Z. Messai, D. Chikouch, Z. Ouennoughi, N. Rouag, M. Rommel, L. Frey
págs. 183-187
págs. 188-193
págs. 194-200
págs. 201-212
págs. 213-226
Hamed Kamrani, Feng Yu, Kristian Frank, Klaas Strempel, Muhammad Fahlesa Fatahilah, Hutomo Suryo Wasisto, Friedhard Römer, Andreas Waag, Bernd Witzigmann
págs. 227-231
págs. 232-242
págs. 243-250
págs. 251-256
págs. 257-261
Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location
Kosala Yapabandara, Vahid Mirkhani, Shiqiang Wang, Min P. Khanal, Sunil Uprety, Tamara Isaacs-Smith, M. C. Hamilton, Minseo Park
págs. 262-268
págs. 269-277
págs. 278-282
Behavior of Au and Pd and the effects of these metals on IMCs in Pd-Au-coated copper wire
Hyun-Woong Park, Sang-Jun Lee, Dong-Chul Cho, Sang-Hoon Lee, Jae-Kyun Kim, Jun-Hee Lee, Sang-Kyo Jung, Hong-Sik Nam, Patrick Hsu, Shin Low, Sung-Hwan Lim
págs. 283-290
págs. 291-297
págs. 298-305
págs. 306-306
págs. 307-312
Infrared response of vanadium oxide (VOx)/SiNx/reduced graphene oxide (rGO) composite microbolometer
Zheng-Yuan Wu, Shiang-Feng Tang, Hong-Yuan Zeng, Wen-Jen Lin, Tzu-Chiang Chen, Yau-Tang Gau
págs. 313-318
Hsin-Kai Fang, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, Po-Yao Lin, Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh
págs. 319-322
págs. 323-329
págs. 330-334
págs. 335-343
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