Evaluation of statistical variability and parametric sensitivity of non-uniformly doped Junctionless FinFET

• Autores: Shalu Kaundal, Ashwani K. Rana
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 91-2, 2018, págs. 298-305
• Idioma: inglés
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• Resumen

  • Below 22-nm technology node, the random variation has become serious issue during dimensional scaling of the device. In this work, the impact of random discrete dopant fluctuations (RDF), gate oxide thickness variations (OTV), and metal work function variations (WFV) in non-uniformly doped Junctionless FinFET structure has been investigated using three dimensional TCAD simulations on large statistical ensemble. Furthermore, this work explores the sensitivity of the device design parameters. The simulation results when contrasted with uniformly doped Junctionless FinFET structure highlight the advantages of non-uniformly doped channel design.