Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current

• Autores: Kai-Huang Chen, Chien-Min Cheng, Cheng-Ying Li, Shou-Jen Huang
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 91-2, 2018, págs. 330-334
• Idioma: inglés
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• Resumen

  • Bipolar switching properties and electrical conduction mechanism of the gadolinium oxide thin film prepared by rf sputtering technology for applications in resistive random access memory devices was investigated in different constant compliance current. The electrical and physical properties of gadolinium oxide thin film were determined by current versus applied voltage (I-V) and XPS measurement. To discuss the electrical conduction mechanism for different constant compliance current, the typical electrical switching curves of gadolinium oxide thin films RRAM devices for different temperature was transferred to fitting. Finally, the activation barrier energy, hopping conduction distance and non-volatile characteristics between the electrons transmission switching behavior in initial metallic filament forming path of the gadolinium oxide thin film RRAM devices was described and explained in physical diagram model.