Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology

• Autores: Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 91-2, 2018, págs. 278-282
• Idioma: inglés
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• Resumen

  • The extreme reduction in minimum transistor-to-transistor spacing has resulted in multiple transistors being often affected by a single ion strike. The charge sharing becomes a prevalent phenomenon, and it usually brings about single-event multiple transients (SEMT) in combinational logic circuits. In this paper, the angular dependency of heavy-ion-induced SEMT is characterized in heavy-ion experiments. We find that angular heavy-ion incidence can induce single-event five transients in 65 nm bulk CMOS technology. Moreover, the characteristics of SEMT are different in twin-well and triple-well technology.