IEICE transactions on electronics

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  Año 1999, Vol. 82, Número 6

  • TCAD - Yesterday, Today and Tomorrow

    R. W. Dutton

    págs. 791-799

    

  • Modeling of Dopant Diffusion in Silicon

    S. T. Dunham, A. H. Gencer, S. Chakravarthi

    págs. 800-812

    

  • Modeling of Channel Boron Distribution in Deep Sub-0.1æm n-MOSFETs

    S. Kumashiro, H. Sakamoto, K. Takeuchi

    págs. 813-820

    

  • METROPOLE-3D: An Efficient and Rigorous 3D Photolithography Simulator

    A. J. Strojwas, X. Li, K. D. Lucas

    págs. 821-829

    

  • Mechanical Stress Simulation for Highly Reliable Deep-Submicron Devices

    H. Miura, S. Ikeda

    págs. 830-838

    

  • Design and Development of 3-Dimensional Process Simulator

    T. Wada, N. Kotani

    págs. 839-847

    

  • 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications

    E. Tsukuda, K. Sonoda, K. Eikyu, K. Ishikawa, T. Nishimura, S. Kawazu, M. Fujinaga, T. Kunikiyo, T. Uchida

    págs. 848-861

    

  • Inverse Modeling and Its Application to MOSFET Channel Profile Extraction

    K. Nishi, H. Hayashi, H. Matsuhashi, K. Fukuda

    págs. 862-869

    

  • Efficient Full-Band Monte Carlo Simulation of Silicon Devices

    B. Meinerzhagen, C. Jungemann, S. Keith, M. Bartels

    págs. 870-879

    

  • Quantum Transport Modeling of Ultrasmall Semiconductor Devices

    H. Tsuchiya, T. Miyoshi

    págs. 880-888

    

  • 2-Dimensional Simulation of FN Current Suppression Including Phonon Assisted Tunneling Model in Silicon Dioxide

    T. Nishimura, K. Eikyu, K. Sakakibara, K. Ishikawa

    págs. 889-893

    

  • Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State

    H. Kawashima, R. Dang

    págs. 894-899

    

  • Noise Modelling in Linear and Nonlinear Devices

    B. Tamen, A. Cappy, F. Danneville, G. Dambrine

    págs. 900-907

    

  • Large Signal Analysis of RF Circuits in Device Simulation

    J. Sato Iwanaga, Z. Yu, R. W. Dutton, B. Troyanovsky

    págs. 908-916

    

  • Two-Dimensional Cyclic Bias Device Simulator and Its Application to GaAs HJFET Pulse Pattern Effect Analysis

    Y. Takahashi, K. Kunihiro, Y. Ohno

    págs. 917-923

    

  • Measurement-Based Mathematical Active Device Modeling for High Frequency Circuit Simulation

    D. E. Root

    págs. 924-936

    

  • Mesh Generation for Application in Technology CAD

    P. Fleischmann, W. Pyka, S. Selberherr

    págs. 937-947

    

  • A Design Hierarchy of IC Interconnects and Gate Patterns

    S. Odanaka, A. Misaka, K. Yamashita

    págs. 948-954

    

  • Non-uniform Multi-Layer IC Interconnect Transmission Line Characterization for Fast Signal Transient Simulation of High-Speed/High-Density VLSI Circuits

    W. Jin, H. Yoo, Y. Eo

    págs. 955-966

    

  • Modeling and Characterization of Ultra Deep Submicron CMOS Devices

    N. D. Arora

    págs. 967-975

    

  • TCAD Needs and Applications from a User's Perspective

    M. Duane

    págs. 976-982

    

  • Process Synthesis Using TCAD: A Mixed-Signal Case Study

    I. Fujii, M. Smayling, J. Rodriguez, A. Young

    págs. 983-991

    

  • Equipment Simulation of Production Reactors for Silicon Device Fabrication

    C. Werner

    págs. 992-996

    

  • Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations

    O. Prigge, M. Suetake, M. Miura Mattausch

    págs. 997-1002

    

  • Automatic Defect Pattern Detection on LSI Wafers Using Image Processing Techniques

    M. Ichikawa, T. Ohmi, K. Maruo, T. Shibata, T. Yamaguchi

    págs. 1003-1012

    

  • Verification of Wafer Test Process Simulation in VLSI Manufacturing System and Its Application

    A. Chikamura, K. Nakamae, H. Fujioka

    págs. 1013-1017

    

  • Analysis of High Frequency Noise of AlGaAs/GaAs HBT

    M. Kim, B. Kim

    págs. 1018-1024

    

  • A TFT-LCD Simulation Method Using Pixel Macro Models

    H. Agki, Z. Yu

    págs. 1025-1030