Microelectronics reliability

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  Año 2019, Número 95

  • Effects of total ionizing dose on single event effect sensitivity of FRAMs

    Qinggang Ji, Jie Liu, Dongqing Li, Tianqi Liu, Bing Ye, Peixiong Zhao, Youmei Sun

    • Resumen

    págs. 1-7

    

  • Dual-axis rotary platform with UAV image recognition and tracking

    Bor-Horng Sheu, Chih-Cheng Chiu, Wei-Ting Lu, Chun-Chieh Lien, Tung-Kuan Liu, Wen-Ping Chen

    • Resumen

    págs. 8-17

    

  • Phase formation and microstructure evolution in Cu/In/Cu joints

    Y.S. Chiu, H.Y. Yu, H.T. Hung, Y.W. Wang, C.R. Kao

    • Resumen

    págs. 18-27

    

  • Simulation of substrate contact effects on heavy ion-induced current transient in SiGe HBT

    Jia-nan Wei, Chaohui He, Pei Li, Yong-hong Li, Hong-Xia Guo

    • Resumen

    págs. 28-35

    

  • Early SEU sensitivity assessment for collaborative hardening techniques: A case study of OPTOS processing architecture

    Alberto Martín-Ortega, Marta Portela García, José R. de Mingo, Santiago Rodríguez, Joaquín Rivas, Sergio López Buedo, Celia López Ongil

    • Resumen

    págs. 36-47

    

  • Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

    B. Rackauskas, M.J. Uren, T. Kachi, M. Kuball

    • Resumen

    págs. 48-51

    

  • Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

    Guohe Zhang, Junhua Lai, Shengli Zhu, Sufen Wei, Feng Liang, Cheng-Fu Yang

    • Resumen

    págs. 52-57

    

  • Comparison of fatigue life prediction methods for solder joints under random vibration loading

    Jiang Xia, Yi-Lin Yang, Qunxing Liu, Qi Peng, LanXian Cheng, GuoYuan Li

    • Resumen

    págs. 58-64

    

  • A mechanistic model of damage evolution in lead free solder joints under combinations of vibration and thermal cycling with varying amplitudes

    P. Borgesen, L. Wentlent, T. Alghoul, R. Sivasubramony, Mano Yadav, S. Thekkut, J.L. Then Cuevas, C. Greene

    • Resumen

    págs. 65-73

    

  • Reliability of 3D memories using Orthogonal Latin Square codes

    Alfonso Sánchez-Macián, F. Garcia-Herrero, Juan Antonio Maestro

    • Resumen

    págs. 74-80

    

  • Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers

    Manikant Singh, Serge Karboyan, M.J. Uren, Kean Boon Lee, Zaffar Zaidi, P. A. Houston, Martin Kuball

    • Resumen

    págs. 81-86