IEICE transactions on electronics

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  Año 1998, Vol. 81, Número 6

  • Frequency Domain Diakoptics for IC Packaging Structures Based on the PEE and FDTD Methods

    T. Shibata, T. Itoh

    pág. 801

    

  • High Frequency Flip-Chip Bonding Technologies and Their Application to Microwave/Millimeter-Wave ICs

    H. Sakai, T. Yoshida, M. Sagawa

    pág. 810

    

  • An Application of the MCM Technology into an MMIC T/R Module for Phased Array Antennas

    Y. Takano, T. Sakai, K. Fujii, Y. Hara, Y. Shibuya

    pág. 819

    

  • Development of K-Band Front-End Devices for Broadband Wireless Communication Systems Using Millimeter-Wave Flip-Chip IC Technology

    T. Yoshida, Y. Ikeda, H. Sakai, M. Sagawa, K. Takahashi, S. Fujita, H. Yabuki

    pág. 827

    

  • Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment

    M. Nishitsuji, T. Uda, O. Ishikawa, J. Itoh, T. Nakatsuka, T. Yoshida

    pág. 834

    

  • A Polyimide/Alumina-Ceramic Multilayer MIC Analog Phase Shifter with a Large Phase Shift

    H. Hayashi, M. Muraguchi

    pág. 841

    

  • Wide-Band Subharmonically Injection-Locked Oscillators Using Three-Dimensional MMIC Technology

    K. Nishikawa, K. Kamogawa, I. Toyoda, T. Tokumitsu

    pág. 848

    

  • Design of a Quasi-Optical Oscillator Using a Grooved Mirror with a HEMT Array

    H. Kikuyama, T. Fujii, K. Mizuno, J. Bae, S. Sugawara, F. Takei

    pág. 856

    

  • A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1.9-GHz PHS

    A. Kameyama, N. Uchitomi, K. K. Kawakyu, Y. Ikeda, M. Nagaoka

    pág. 862

    

  • Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET's and Their Application to V-Band Amplifiers

    Y. Yamane, K. Yamasaki, K. Onodera, K. Nishimura, T. Nittono

    pág. 868

    

  • O.1 æm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications

    Y. Ohashi, Y. Awano, M. Abe, K. Hikosaka, N. Harada, T. Saito, H. Oikawa

    pág. 876

    

  • Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load-Pull Method

    M. Ida, M. Nakatsugawa

    pág. 882

    

  • A High Power and Low Distortion Amplifier Module for Large Cell Base Station in Digital Cordless System

    H. Masato, Y. Nakamura, Y. Ota, M. Nakamura, M. Maeda, S. Morimoto

    pág. 886

    

  • A High-Efficiency Linear Power Amplifier with a Novel Output Power Control Technique

    M. Nakatsugawa, Y. Yamaguchi, M. Muraguchi, T. Nakagawa

    pág. 892

    

  • Single 1.5 V Operation Power Amplifier MMIC with SrTiO~3 Capacitors for 2.4 GHz Wireless Applications

    M. Tomita, Y. Bito, K. Takemura, Y. Miyasaka, T. B. Nishimura, N. Iwata, K. Yamaguchi

    pág. 898

    

  • A Calculation Method of Large-Signal Characteristics of Multi-Stage Power Amplifier Modules Using Source-Pull and Load-Pull Data

    T. Takagi, K. Mori, Y. Itoh, K. Komuro

    pág. 904

    

  • Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications

    K. K. Kawakyu, Y. Kitaura, A. Kameyama, N. Uchitomi, M. Nagaoka, H. Wakimoto, T. Seshita

    pág. 911

    

  • Practical Design Procedure of an Elliptic Function Dual-Mode Cavity Filter Coupled through a Non-zero-Thick Septum

    T. Ishizaki, K. Ogawa, H. Miyake

    pág. 916

    

  • Basic Characteristics of a Quarter-Wavelength CPW Resonator with Tap-Feed Structure and Its Application to a Bandpass Filter with Attenuation Poles

    Koichi Wada, I. Awai

    pág. 924

    

  • Rigorous Design of Iris-Coupled Waveguide Filters by Field-Theory-Based Approach and Genetic Algorithms

    F. Xiao, H. Yabe

    pág. 934

    

  • The Transparent Wave Absorber Using Resistive Film for V-Band Frequency

    S. Nishimoto, K. Takizawa, Osamu Hashimoto, T. Abe

    pág. 941

    

  • Reflection Characteristics Measurement from a Truck and a Passenger Car at 60 GHz Frequency Band

    H. Ishizaka, Osamu Hashimoto, H. Higashi

    pág. 948

    

  • Stability Conditions of Two Port Networks Considering Load Conditions

    Y. Miwa

    pág. 953

    

  • A Simulation Methodology for Bidirectional Hot-Carrier Degradation in a Static RAM Circuit

    N. Koike, M. Takeo, K. Tatsuuma

    pág. 959

    

  • Evaluation of the Voltage Down Converter (VDC) with Low Ratio of Consuming Current to Load Current in DC/AC Operation Mode

    T. Endoh, K. Nakamura, F. Masuoka

    pág. 968

    

  • Analysis and Synthesis of a Class of Microwave Filters from 2-Variable Point of View

    H. Fujimoto

    pág. 975

    

  • 0.012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications

    K. Honmyo, S. Ishida, Y. Kitaura, N. Lichitomi, M. Nagaoka, H. Nagasawa, K. K. Kawakyu

    pág. 985