Effect of layer thickness on the electrostatic potential in InGaN quantum wells
S. Tanaka, M. Stevens, H. Marui, M.R. McCartney, F. A. Ponce, A. Bell
págs. 4651-4653
Donald W. Brown, Dongyi Seo, Hahn Choo, Mark A.M. Bourke, Jonathan Boddoes
págs. 4654-4656
H. Mendez, D.V. Vyalikh, T.U. Kampen, G.N. Gavrila, W. Braun, D.R.T. Zahn
págs. 4657-4659
Mn diffusion in Ga<sub>1-x</sub>Mn<sub>x</sub>As/GaAs superlattices
A. Mikkelsen, E. Lundgren, L. Ouattara, O. Pacherova, J. Sadowski, H. Davidson
págs. 4660-4662
Jiro Kasahara, Kazumasa Nomoto, Nobukazu Nirai, Makoto Noda, Nobuhide Yoneya, Masaru Wada
págs. 4663-4665
Memory effect from charge trapping in layered organic structures
Ioannis Kymissis, Todd Crisp, Vladimir Bulovi¿
págs. 4666-4668
Silicon doping dependence of highly conductive n-type Al<sub>0.7</sub>Ga<sub>0.3</sub>N
J. Y. Lin, M. L. Nakarmi, K. Zhu, H.X. Jiang, K.H. Kim
págs. 4669-4671
Toshiki Makimoto, Makoto Kasu, Yoshitaka Taniyasu
págs. 4672-4674
Tunable field imbalance and spin precession in magnetic double layers
Y. Au, K. Bussmann, R. Sooryakumar
págs. 4675-4677
Doping of low-temperature GaAs and GaMnAs with carbon
G. Karczewski, G. Schmidt, C. Gould, A. Barcz, R. Jakiela, L.W. Molenkamp, C. Rüster, K. Brunner, M. Sawicki, G.M. Schott
págs. 4678-4680
Thermal effects on the magnetic-field dependence of spin-transfer-induced magnetization reversal
J. A. Katine, J.R. Childress, D. Lacour, M.J. Carey, N. Smith
págs. 4681-4683
K. Fukamichi, R.Y. Umetsu, T. Oyamada, K. Ishida, K. Kobayashi, A. Fujita, R. Kainuma
págs. 4684-4686
Justin Schwartz, P. V. P. S. S. Sastry
págs. 4687-4689
págs. 4690-4692
Characterization of single magnetic particles with InAs quantum-well Hall devices
G. Landry, M. Johnson, B.R. Bennett, M.M. Miller, V. Smolyaninova
págs. 4693-4695
Z. T. Song, Y. Wang, S.L. Feng, C. L. Choy, H.L.W. Chan
págs. 4696-4698
Paul C. McIntyre, David Chi
págs. 4699-4701
R.F. DePaula, M. Nastasi, L. Stan, Q. X. Jia, P.N. Arendt, J.-K. Lee, B.S. Kang
págs. 4702-4704
Jin-Seong Park, Harry L. Tuller
págs. 4705-4707
Interface-related thickness dependence of the tunability in BaSrTiO<sub>3</sub> thin films
R. Waser, U. Boettger, U. Ellerkmann, R. Liedtke
págs. 4708-4710
Two-dimensional planar size effects in epitaxial PbTiO<sub>3</sub> thin films
Keewon Kim, Sunggi Baik, Kilho Lee
págs. 4711-4713
R. Palan, C.Y. Yau, R.C. Buchanan, K. Tran
págs. 4714-4716
págs. 4717-4719
M. Tyunina, J. Levoska
págs. 4720-4722
págs. 4723-4725
Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics
C.L. Sun, C.C. Liao, Albert Chin, S.Y. Chen
págs. 4726-4728
Field-controlled suppression of phonon-induced transitions in coupled quantum dots
Elisa Molinari, Massimo Rontani, Guido Goldoni, Filippo Troiani
págs. 4729-4731
K.C. Leou, H.W. Wei, C.-H. Tsai, C.H. Tung, M.T. Wei, Z.Y. Juang, C.H. Weng
págs. 4732-4734
págs. 4735-4737
Phase imaging and the lever-sample tilt angle in dynamic atomic force microscopy
Robert W. Carpick, Matthew J. D'Amato, Matthew S. Marcus, Mark A. Eriksson
págs. 4738-4740
© 2001-2024 Fundación Dialnet · Todos los derechos reservados