Rare earth- and Si nanostructure-based light emitting devices for integrated photonics
- Autores: Yonder Antonio Berencén Ramírez
- Directores de la Tesis: Jose Antonio Rodríguez Pérez (dir. tes.), Blas Garrido Fernández (dir. tes.)
- Lectura: En la Universitat de Barcelona ( España ) en 2014
- Idioma: inglés
- Tribunal Calificador de la Tesis: Albert Cornet i Calveras (presid.), Caroline Bonafos (secret.), Montserrat Nafria i Maqueda (voc.)
- Materias:
- Enlaces
- Tesis en acceso abierto en: TDX Dipòsit Digital de la UB
- Resumen
This thesis presents experimental work on developing rare-earth ions and Si nanostructures as a material platform for light emitting devices (LEDs) in the visible and near-infrared range. The realization of the different electroluminescent devices, based on a single, bi- or tri-layer approach of silicon oxide and/or silicon nitride co-doped or not with rare earth ions, is successfully performed. Several complementary metal-oxide-semiconductor (CMOS) compatible fabrication techniques such as co-magnetron sputtering, plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD) and ion implantation are used. By using characterization techniques such as time of flight secondary ion mass spectrometry (TOF-SIMS), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), energy-filtered transmission electron microscopy (EFTEM), focused ion beam (FIB) and ellipsometry, the structural and compositional properties of the studied active layers are determined. In addition, electro-optical properties at room and at high temperatures (25 0C – 300 0C) under quasi-static and dynamic regimes are studied in both visible and near-infrared spectral region. Typically, the used electro-optical techniques have been current-voltage, capacitance-voltage, charge to breakdown, electroluminescence (EL)-current, EL-voltage and time-resolved EL.
