Resumen de Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide
E. San Andrés, M.A Pampillón, C. Cañadilla, Pedro Carlos Feijoo Guerrero, A. del Prado
We studied the electrical properties of metal-oxide-semiconductor devices based on Gd 2 O 3 deposited on InP by high pressure sputtering and a novel plasma oxidation process. The resulting devices show fully functional capacitance curves., indicating an unpinned Fermi level. The samples were annealed in forming gas at temperatures up to 550°C. We studied the interface trap density of the devices. We found out that with increasing annealing temperature the defect content decreases but at 550°C the capacitance drops and the leakage current increases., indicating a dielectric degradation.
