Resumen de Defect assessment and leakage control in atomic layer deposited Al2O3 and HfO2 dielectrics

M.B Gonzalez, J.M. Rafí, O. Beldarrain, M. Zabala, F. Campabadal

• In this work, a systematic study of the electrical characteristics of Al 2 O 3 and HfO 2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of pre-existing electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.