A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance

• R.A. Camillo-Castillo ^[2] ; Q.Z. Liu ^[2] ; V. Jain ^[2] ; J.W. Adkisson ^[2] ; M.H. Khater ^[1] ; P. Gray ^[2] ; J.J. Pekarik ^[2] ; R. Malladi ^[2] ; D. L. Harame ^[2]
  1. [1] IBM Research – Thomas J. Watson Research Center

     IBM Research – Thomas J. Watson Research Center

     Town of Yorktown, Estados Unidos

     
  2. [2] IBM Microelectronics Division
• Localización: SiGe and Ge: materials, processing, and devices / D. Harane (dir. congr.), 2006, ISBN 978-1-62332-186-4, págs. 53-66
• Idioma: inglés
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