Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology

• J.O. Borland ^[2] ; M. Sugitani ^[3] ; P. Oesterlin ^[4] ; W. Johnson ^[5] ; T. Buyuklimanli ^[6] ; R. Hengstebeck ^[6] ; E. Kennon ^[1] ; K.S. Jones ^[1] ; A. Joshi ^[7]
  1. [1] University of Florida

     University of Florida

     Estados Unidos

     
  2. [2] J.O.B. Technologies, AIP
  3. [3] SEN Corporation
  4. [4] Innovavent
  5. [5] KLA-Tencor)
  6. [6] EAG
  7. [7] Active Layer Parametrics

  Mostrar afiliaciones +
• Localización: SiGe and Ge: materials, processing, and devices / D. Harane (dir. congr.), 2006, ISBN 978-1-62332-186-4, págs. 127-146
• Idioma: inglés
• Texto completo no disponible (Saber más ...)