SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance

• Q.Z. Liu ^[2] ; J.W. Adkisson ^[2] ; V. Jain ^[2] ; R.A. Camillo-Castillo ^[2] ; M.H. Khater ^[1] ; P.B. Gray ^[2] ; J.J. Pekarik ^[2] ; B. Zetterlund ^[2] ; A.W. Divergilio ^[2] ; M.L. Kerbaugh ^[2] ; D.L. Harame ^[2]
  1. [1] IBM Research – Thomas J. Watson Research Center

     IBM Research – Thomas J. Watson Research Center

     Town of Yorktown, Estados Unidos

     
  2. [2] IBM Microelectronics Division
• Localización: SiGe and Ge: materials, processing, and devices / D. Harane (dir. congr.), 2006, ISBN 978-1-62332-186-4, págs. 285-294
• Idioma: inglés
• Texto completo no disponible (Saber más ...)