Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations

• D. Lu ^[1] ; P. Morin ^[2] ; B. Sahu ^[3] ; T.B. Hook ; P. Hashemi ^[1] ; A. Scholze ^[1] ; B. Kim ^[4] ; P. Kerber ^[1] ; A. Khakifirooz ^[1] ; P. Oldiges ^[1] ; K. Rim ^[1] ; B. Doris ^[1]
  1. [1] IBM Research – Thomas J. Watson Research Center

     IBM Research – Thomas J. Watson Research Center

     Town of Yorktown, Estados Unidos

     
  2. [2] STMicroelectronics
  3. [3] GLOBALFOUNDRIES
  4. [4] Samsung Electronics

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• Localización: SiGe and Ge: materials, processing, and devices / D. Harane (dir. congr.), 2006, ISBN 978-1-62332-186-4, págs. 337-346
• Idioma: inglés
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