Efficient simulation of 3-D stress distributions at trench structures caused by thermal mismatch of trench filling and silicon substrate

• R. Slehobr ^[1] ; G. Hobler ^[1]
  1. [1] Institut für Allgemeine Elektrotechnik und Elektronik University of Technology, Austria
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 13, Nº 4, 1994, págs. 861-870
• Idioma: inglés
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• Resumen

  • An efficient method for the calculation of 3‐D stress distributions at embedded structures in silicon caused by different thermal expansion coefficients between silicon and inclusion is presented. The method is based on the analytical solution for the stress field outside a rectangular parallelepipedic trench. This solution is adapted for the calculation of arbitrarily shaped inclusions and for the stress calculation inside the inclusion, too.