Resumen de Mopit:: open system for device and technology simulation
A.L. Alexsandrov, P.A. Androsenko, V.M. Bedanov, A.M. Bekesheva, E.E. Dagnan, O.E. Dnitrieva, G.V. Gadiyak, V.P. Ginkin, M.S. Ivanov, Zh.L. Korobitsina, T.M. Lukhanova, M.S. Obrekht, A.A. Shinanskiy, V.A. Schveigert, I.V. Schveigert, E.G. Tishkovsky, Yu.P. Zhydkov
In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor processing : ion implantation of impurities , diffusion , radiation enhanced diffusion , thermal oxidation of silicon , molecular‐beam epitaxy, plasma‐chemical etching and deposition, cross‐sectional profile evolution of trench in plasma‐etching and deposition; as well as the following devices: MOS‐structures , high‐voltage diode, element of memory, charge accumulation in a sub‐gate dielectric.
