Mopit:: open system for device and technology simulation

• A.L. Alexsandrov ^[1] ; P.A. Androsenko ^[1] ; V.M. Bedanov ^[1] ; A.M. Bekesheva ^[1] ; E.E. Dagnan ^[1] ; O.E. Dnitrieva ^[1] ; G.V. Gadiyak ^[1] ; V.P. Ginkin ^[1] ; M.S. Ivanov ^[1] ; Zh.L. Korobitsina ^[1] ; T.M. Lukhanova ^[1] ; M.S. Obrekht ^[1] ; A.A. Shinanskiy ^[1] ; V.A. Schveigert ^[1] ; I.V. Schveigert ^[1] ; E.G. Tishkovsky ^[1] ; Yu.P. Zhydkov ^[1]
  1. [1] Institute of Theoretical and Applied Mechanics

     Institute of Theoretical and Applied Mechanics

     Rusia

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 11, Nº 4, 1992, págs. 445-455
• Idioma: inglés
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• Resumen

  • In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor processing : ion implantation of impurities , diffusion , radiation enhanced diffusion , thermal oxidation of silicon , molecular‐beam epitaxy, plasma‐chemical etching and deposition, cross‐sectional profile evolution of trench in plasma‐etching and deposition; as well as the following devices: MOS‐structures , high‐voltage diode, element of memory, charge accumulation in a sub‐gate dielectric.