Resumen de Numerical simulation of the thermal oxidation of silicon

G.V. Gadiyak, J.L. Korobitsina, V.I. Kranarenko

• Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the hydrodynamical models — an ideal fluid and a viscous fluid models. If nitride mask is absent, a one‐dimensional model is used.The influence of an induced stress on the diffusion and reaction is taken into account.