Numerical simulation of the thermal oxidation of silicon

• G.V. Gadiyak ^[1] ; J.L. Korobitsina ^[1] ; V.I. Kranarenko ^[1]
  1. [1] Institute of Theoretical and Applied Mechanics Siberian Branch of Russian Academy of Sciences, Rusia
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 11, Nº 4, 1992, págs. 419-431
• Idioma: inglés
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• Resumen

  • Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the hydrodynamical models — an ideal fluid and a viscous fluid models. If nitride mask is absent, a one‐dimensional model is used.The influence of an induced stress on the diffusion and reaction is taken into account.