Resumen de Resolving trapping effects by scanning microwave microscopy
S. Hommel, N. Killat, T. Schweinboeck, A. Altes, F. Kreupl
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.
