Resolving trapping effects by scanning microwave microscopy

• Autores: S. Hommel, N. Killat, T. Schweinboeck, A. Altes, F. Kreupl
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 92, 2019, págs. 179-181
• Idioma: inglés
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• Resumen

  • Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.