Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama
The electromagnetic compatibility (EMC) study is an indispensable step in the development cycle of power system modules. In power applications using normally off transistors, short-circuit mode can be recurrent during operation, especially when powering converters. In this paper, we present a study on the evolution of conducted interferences (in common and differential mode voltages) generated by a static converter after an aging test of silicon carbide (SiC) MOSFET transistors from the first generation of CREE subjected to repetitive short-circuit operations. This work presents an experimental investigation of the repetitive short-circuit aging effect of N Channel power SiC MOSFETs on the amplitude of resonances in the interference spectra after aging tests. Experimental results are presented and analyzed.
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