New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges

• Autores: D. Nouguier, X. Federspiel, G. Ghibaudo, M. Rafik, D. Roy
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 87, 2018, págs. 106-112
• Idioma: inglés
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• Resumen

  • In this paper we present NBTI stress and recovery effects measured on PFET devices issued from various FDSOI technologies. NBTI degradation and recovery subsequent to DC stress are measured at the μs time scale. After in-depth analysis of temperature and stress/recovery bias effects, we propose new NBTI models for degradation and recovery kinetics including temperature, Vgstress and Vgrecovery dependencies. These models are finally validated on different technologies and various experimental conditions.