Physics-based modeling of TID induced global static leakage in different CMOS circuits

• Autores: Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov, Maxim G. Drosdetsky
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 84, 2018, págs. 181-186
• Idioma: inglés
• Texto completo no disponible (Saber más ...)
• Resumen

  • Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness parameters, dose-rate and annealing effects, and dependence on electric modes under irradiation. It was shown that proposed approach can be applied for description of dose dependent static leakage currents in complex FPGA circuits.