Thermal lifetime estimation method of IGBT module considering solder fatigue damage feedback loop

• Autores: Bing Gao, Fan Yang, Minyou Chen, Yigao Chen, Wei Lai, Chao Liu
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 82, 2018, págs. 51-61
• Idioma: inglés
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• Resumen

  • The accurate thermal damage assessment and lifetime estimation are essential for ensuring the safety and reliability of semiconductor power devices. This study presents a thermal fatigue feedback loop method for evaluating the lifetime of an Insulated Gate Bipolar Transistor (IGBT) module considering the accumulated effect of solder layer fatigue. First, a three-dimension (3D) finite element method (FEM) model for an IGBT module is established and, combined with the accelerated aging experiments resulting in that the accumulated thermal resistance increment could not be neglected when conducting thermal network modeling and lifetime consumption assessment. Then, the Cauer thermal network is improved for establishing the fatigue feedback loop model, which takes the influence of accumulated solder layer fatigue into account when estimating the power module lifetime. The effectively of this method is validated by experimental results and resisting models. Finally, the lifetime consumption of the IGBT module utilized in a practical wind energy conversion system, is investigated by using the multi-scale feedback loop method. It is found that the Miner model would exaggerate the lifetime of power modules and, the lifetime consumption under low frequency thermal loading is faster than that under a fundamental frequency condition.