ESD protection structure with reduced capacitance and overshoot voltage for high speed interface applications

• Autores: Aihua Dong, Javier A. Salcedo, Srivatsan Parthasarathy, Yuanzhong Zhou, Sirui Luo, Jean-Jacques Hajjar, Juin J. Liou
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 79, 2017, págs. 201-205
• Idioma: inglés
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• Resumen

  • Abstract Dual diodes with embedded silicon controlled rectifier (DD-SCR) for high-speed applications are presented. A new DD-SCR topography is shown to exhibit a high failure current (It2), small on-state resistance (RON), low voltage overshoot and low parasitic capacitance. This is a preferred device option for broadband high-speed data converter applications in advanced 28 nm CMOS processes. A comprehensive device characterization demonstrates the design tradeoffs and the superior ESD performance in relation to the devices' variations capacitance in the sub 40 fF range.