Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer

• Autores: Yan-Lin Li, Kuei-Shu Chang-Liao, Yu-Wei Chang, Tse-Jung Huang, Chen-Chien Li, Zhao-Chen Gu, Po-Yen Chen, Tzung-Yu Wu, Jiayi Huang, Fu-Chuan Chu, Shih-Han Yi
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 79, 2017, págs. 136-139
• Idioma: inglés
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• Resumen

  • Abstract Ultralow equivalent oxide thickness and excellent reliability characteristics in Ge MOS devices with ZrO2 gate dielectrics are achieved by capping Hf or Zr on interfacial layer. Device with a Hf-cap layer demonstrates the lowest interface trap density and stress-induced leakage current. On the other hand, device with a Zr-cap layer exhibits the lowest hysteresis effects and stress-induced voltage shifts. The HfGeOx IL of high quality and ZrGeOx IL with few oxide traps are promising to improve reliability characteristics in Ge MOS devices.