Modelling the temperature influence on dc characteristics of the IGBT

• Autores: Paweł Górecki, Krzysztof Górecki, Janusz Zarębski
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 79, 2017, págs. 96-103
• Idioma: inglés
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• Resumen

  • Abstract This paper concerns modelling the influence of temperature on dc characteristics of IGBTs. In the paper, the form of two popular literature models of this device are analysed and their disadvantages are pointed out. The authors' model of the IGBT for the SPICE software is proposed. A description of this model, a manner of its parameters estimation and the results of experimental verification of its correctness are presented in various operating ranges and in a wide range of ambient temperature values. On the basis of the obtained results of calculations and measurements the range of applications of the authors' model and the investigated literature models is discussed.